TY - JOUR ID - 1942 TI - Solutions of diffusion equation for point defects JO - Journal of Mathematical Modeling JA - JMM LA - en SN - 2345-394X AU - Velichko, Oleg AD - Department of Physics, Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus Y1 - 2016 PY - 2016 VL - 4 IS - 2 SP - 187 EP - 210 KW - silicon KW - implantation KW - point defect diffusion KW - Modeling DO - N2 - An analytical solution of the equation describing diffusion of intrinsic point defects in semiconductor crystals has been obtained for a one-dimensional finite-length domain with the Robin-type boundary conditions. The distributions of point defects for different migration lengths of defects have been calculated. The exact analytical solution was used to verify the approximate numerical solution of diffusion equations for vacancies and self-interstitials. Based on the numerical solution obtained, investigation of the diffusion of silicon self-interstitials in a highly doped surface region formed by ion implantation was carried out. UR - https://jmm.guilan.ac.ir/article_1942.html L1 - https://jmm.guilan.ac.ir/article_1942_a7ea5d642d6d4b3630417e335fb3ec24.pdf ER -